ABSTRACT:-

Semiconductor circuits are typically constructed of both n-channel FETs (n-FETs) and p-channel FETs (p-FETs), whose dual polarity capabilities provide advantages in switching speed and energy efficiency. However, in high voltage circuits such as inverters and converters, both the upper and lower arms are composed of n-FETs. The circuit is not symmetrical and requires additional components to work properly, but at the cost of lower efficiency and switching speed. Here, we propose a complementary circuit based on symmetrical operation by adding a power p-FET with performance equivalent to a power n-FET. There are no power p-FETs other than Diamond. Diamond p-FETs now approach or exceed the characteristics of SiC or GaN n-FETs. While single-crystalline diamonds are still 1 to 2 inches in diameter, polycrystalline diamonds are larger than 4 inches and can be used in power and high-frequency FETs. Grain boundaries are not leakage paths for hole conduction in p-FETs. We are close to realizing complementary high-voltage circuits that have never existed in electronics.

PROF. DR. HIROSHI KAWARADA

Prof. Dr. Hiroshi Kawarada received Doctor of Engineering from Waseda University (1985) and joined Osaka University as Assistant Professor at Osaka, University (1986) where he started diamond research. Later, he worked in Waseda University as Associate Professor (1990) and Professor (1995-), where he developed C-H diamond FET in 1994. As Visiting Researcher he stayed in Fraunhofer Institute (IAF) by Fellowship of Alexander von Humboldt Foundation (1995-1996). As an organizer he served for European Conference on Diamond and Related Materials (1998-2008). In Japan, he also served for Japan Applied Physics Society as Board Member, New Diamond Forum as Chairman (2009-2014) and Science Council of Japan as Member. His research field is nanoelectronics, bioelectronics and power electronics using diamond, where he has 380 articles with about 10000 citations.

ABSTRACT:-

The talk will discuss application trends in the optoelectronics industry and the underlying technical challenges that must be addressed to serve those markets. Applications of monolithic multi-pixel devices, discrete microLED devices and laser devices will be explored and recent progress & future challenges discussed.

Dr David Lacey is Director of Advanced Development & Services, R&D for Osram Opto Semiconductors (M) Sdn Bhd, Penang – part of the ams OSRAM group. He has been based in Malaysia for more than 20 years and is currently a Board Member of Collaborative Research in Engineering, Science & Technology (CREST) and the President of FREPENCA – the Free Industrial Zone, Penang Companies Association. He also represents ams Osram at SFAM – The Semiconductor Fabrication Association of Malaysia since the association’s foundation in 2016.

ABSTRACT:-

The Malaysian Electronics and Electrical (E&E) industry has stood as a pillar of the nation's economy for the past five decades, consistently ranking as the country's top exporter. Traditionally, Malaysia has excelled in the semiconductor value chain, particularly in the back-end activites, with ATP (Assembly, Testing, and Packaging) operations, boasting a significant 13% share of the global market in this domain. However, despite these achievements, the industry's overall contribution to the nation's GDP remains relatively modest, hovering around 6.9%.

 

Recognising the imperative for our local E&E sector to ascend to the higher value chain, it is essential to bolster its role in driving higher GDP growth for the nation. This endeavor aligns seamlessly with the objectives outlined in the recently launched New Industrial Master Plan (NIMP 2030) and the E&E Roadmap: Technology Development 2021-2030.

 

In this keynote presentation, our speaker will delve into a comprehensive analysis of the global and local E&E Semiconductor industry. More importantly, they will explore strategies to propel our nation up the E&E value chain though high-value semiconductor technology (HVST), harmonising with national policies and leveraging the pivotal role of strategic agencies such as MIMOS in order to collectively work towards realising our national aspirations and fostering sustainable economic growth.

Keywords: Semiconductor, E&E, high-value semiconductor technology, HVST, NIMP 2030, MIMOS

ABSTRACT:-

This talk will review some of the recent trends in functional optical structures and particularly focus on the aspects of increased light-matter interaction via the design of optical micro-nano structures and integration of the micro-nano structures on a chip. Structures sustaining surface waves are first reviewed with a particular emphasis on their propagation lengths and ability to support on-chip integrated functional devices. Semiconductor microcavities supporting strong interaction between excitons and photons and leading to the formation of exciton-polaritons that can be applied in interferometric microdevices are then presented. Structures supporting bound states in the continuum with applications in lasing are also introduced. Finally, the enhancement of chiral signal in a cavity using 2D chiroptical material property is presented.

DR. JEAN- JACQUES DELAUNAY

Dr. Jean-Jacques Delaunay is an Associate Professor at the School of Engineering, The University of Tokyo. He received his Ph.D. degree from Strasbourg University. He has worked for research institutions in the fields of optics, photonics, and optical functional materials in France, Germany, and Japan. He conducts research on the synthesis of micro/nanomaterials with controlled structures and functionalities for sensing and energy conversion. He also conceives plasmonic nanostructures to enhance the sensitivity of detectors and improve the efficiency of light collection for solar energy conversion devices. His current research projects include the development of surface wave platforms for optical sensing and light-emitting devices. He has co-authored more than 100 scientific publications and serves as an APEX/JJAP editor.

ABSTRACT:-

IC Substrates are one of the key elements of advanced packaging and provide translation from the nano world of IC`s to the micro world of printed circuit boards. There they serve aspects including data transport, reliable electrical supply, thermal management and mechanical stability. Most of the advanced packaging concepts are built on the IC Substrate technology, including so-called chip first panel level packages and fan out packages.

 

I will introduce AT&S and the main concepts for substrate based advanced packaging technologies. In the second part, focuses on packages and modules highlight actual developments.  Third, the materials and the support of advanced simulation technologies for the development of reliable packages will be targeted. The presentation with be closed with a summary.

Keywords: IC Substrates, Packaging, Materials, Virtual development

DR. GUENTHER MAIER

Dr. Guenther Maier Master in Chemistry (University of Graz, Austria), PhD in Materials Science (University of Leoben, Austria). 20+ years work experience as scientist (50+ papers in web of science), program manager and head of department at Materials Center Leoben Forschung. Since three years at AT&S, world-wide responsible for the research and university network development. Since more than 18 months engaged in Malaysia to build a sustainable network in research and higher education for IC Substrates and Advanced Packaging.

Abstract

The epitaxial growth of compound-semiconductor thin films by metal-organic chemical vapor deposition (MOCVD) is counted as standard and mature technology. In this work growth results of thin aluminum nitride (AlN) and gallium nitride (GaN) layers grown by Next Level Epitaxy (NLE) process on sapphire, silicon and glass are presented. The growth temperature of the NLE layers are below 250°C surface temperature. The NLE process is a combination of PVD (physical vapor deposition) and CVD (chemical vapor deposition) and is following in principle the MOCVD growth standard. All steps use different plasma sources in various combinations including one DC- (direct current) bias and one RF (radio frequency)-bias. In total four different plasma sources have been used. As Al-source 99.999% pure Al was used. As nitrogen source nitrogen gas with a purity of 99.9995% was used which is introduced by a homemade ion gun. Additionally, argon, oxygen and hydrogen were used. The used plasma sources are all designed as stripe sources. First the substrates were cleaned with a mixture of argon and oxygen and after with argon and hydrogen using the RF-bias. After the in-situ cleaning first aluminum in monolayer range was deposited followed by low plasma power and low growth rate AlN and after higher plasma power and higher growth rate AlN. During the AlN growth additionally a DC-bias was used. The NLE AlN on sapphire was overgrown by MOCVD. The growth results of the various AlN and GaN thin films and their overgrowth in MOCVD will be presented.

Abstract

This slot aims to introduce the presence of epitaxy development department in ams-OSRAM located in Kulim, Kedah. The talk will begin with introducing an Intelligent Forward Lighting and Projection system that is capable of eliminating the risk of dazzling oncoming traffic and projecting warning symbols on the road for communication purposes. Aside from the advanced optics and drivers that made such lighting possible, the beating heart of this system is the light emitting diode (LEDs) layers that is grown by epitaxy. This talk will focus high volume production challenges when increasing the wafer diameter, and this is followed by potential solutions that can alleviate such issues.

Dr. Azharul Arif Kamarulzaman

Dr. Azharul Arif Kamarulzaman is a Staff Epitaxy R&D Engineer for Osram Opto Semiconductors (M) Sdn Bhd, Kulim – part of the ams OSRAM group, where he is currently working on new epitaxy product introduction. He has 5 years of experience with a balanced mixture of III-nitride epitaxy development, introduction and process sustaining. In 2023, he is selected as one of epitaxy key expert in high volume production within ams OSRAM. Along with this, he accumulates 11 years of experience in III-Nitrides materials growth and characteristics during his PhD studies with Institute of Nano Optoelectronics Research and Technology (INOR), USM

Abstract

Optical product development is complex, expensive, risky and time consuming. A standard product development lifecycle covers ideation, demand validation, prototype, optimization, followed by manufacturing and commercialization. In practice, experimental design and assessment of product quality require long period of time and high resource consumption. To reduce complexity in experimentation, multiphysics simulations together with appropriate optimization techniques are usually carried out to find optimal design and materials until the product reaches satisfaction between performance, quality, manufacturability and cost. This presentation aims to highlight the role of physical modelling and optimization in optical product development. A few practical examples will be presented at a glance. First example is about the use of electro-optical modelling and a famous paradigm of swarm intelligence, namely, particle swarm optimization (PSO), to simplify the performance evaluation of different LED chip layout designs. The workability of PSO to solve design-optics problem was justified by the good agreement between experiment and simulation-proposed solution. Followed by the success of PSO, another example is given to the assessment of an improved version of PSO, namely, multi-objective PSO (MOPSO). Finally, examples are given to the optical modelling of LED packages for failure analysis and materials quality control.

Dr. Sai Cheong Lee

Dr. Sai Cheong Lee is a computational physicist graduated from Universiti Sains Malaysia, currently working as a Senior Staff Modelling and Simulation Engineer in ams-OSRAM. His fields of specialization are LED optics, phosphor materials, applied optimization and simulation software development. With his effort in strengthening the cross-functional modelling and simulation competency in ams-OSRAM, he has won the OSRAM Wizard of OS: Commendation Award in 2019, followed by the appointment of Key Expert Modelling in 2021. Apart from the lighting technology, Dr. Lee has extensive experience on how physical modelling applied with infrared spectroscopy to characterize semiconductor materials. Despite his full-time engineer job, he is a volunteer scientist to provide complementary supervision for university postgraduate student and conduct peer review services for academic publisher such as Optica, IOP, Elsevier, etc. He was appointed by YSN-ASM (Young Scientist Network – Academy of Science Malaysia) as an industrial young scientist member since 2020.

Abstract

In the past decade, humidity sensors have been the subject of extensive research and consideration in a wide variety of applications, including agriculture, food industries, climate monitoring, chemical storage, healthcare, and semiconductor industries, to name a few. The studies have been centred on the preparation of humidity sensors with good humidity sensing performance and low cost. These sensors are required to be manufactured on a large scale and must fulfil the stringent performance obligations of emerging areas. In this investigation, resistive-type humidity sensors made of zinc oxide (ZnO) nanomaterials were developed. The chemical solution immersion technique was utilised during the production of the ZnO nanomaterials. It is possible to produce nanostructured films on a large scale using this chemical solution immersion method, which is a fabrication process that is both cost-effective and efficient. The findings of this research indicate that ZnO nanomaterials could be promising candidates for use in applications involving humidity sensing. ZnO nanomaterials have a high sensitivity to humidity sensing, and they could provide potential applications for humidity sensing in emerging areas.

Assoc. Prof. Ir. Ts. Dr. Mohamad Hafiz Mamat

Assoc. Prof. Ir. Ts. Dr. Mohamad Hafiz Mamat graduated from the Department of Electrical and Electronic Engineering and Information Engineering at Nagoya University, Japan, in 2005 and received both an MSc degree and a PhD degree in Electrical Engineering from Universiti Teknologi MARA (UiTM) Shah Alam, Malaysia, in 2010 and 2013, respectively. Currently, he is the Coordinator of Publications for the College of Engineering and Head of the NANO-ElecTronic Centre (NET) at UiTM. His research area is in the field of nanoelectronics, which focuses on nanomaterial syntheses and the fabrication of electronic devices such as sensors, nanogenerators, and solar cells. He was awarded both Professional Engineer (Ir.) and Professional Technologist (Ts.) in 2018. He has published over 400 papers in journals and conference proceedings. He was assigned as a visiting scientist at BSA Rahman Crescent Institute of Science and Technology, Chennai, India, in 2018. He has received research grants of more than RM 2 million as a principal investigator and member from various agencies, such as the Ministry of Higher Education Malaysia and CREST. Up to now, he has 2 Malaysian patents and 32 copyrights registered at MyIPO. He joined several conferences and symposia at the international and national levels as a participant, invited speaker, and keynote speaker. He also serves as the head of the technical committee for NANO-SciTech conferences.

Abstract

Aluminum gallium nitride based ultra-violet light emitting diodes (AlGaN based UV LEDs) have recently gained much attentions owing to their potential in various areas of applications, including virus disinfection and water purification. Nonetheless, commercially available UV LEDs today are only few percent efficient, making them are not energy- and cost-efficient for large-scale environments. Of the key approach to increase the LEDs efficiency is to grow the LEDs on low threading dislocation density (TDD) aluminum nitride (AlN) layer. An ideal route to obtain such AlN layer is by growing the layer on native AlN substrate. However, such substrate is currently expensive and available in limited sizes. To date, most of AlN layers are grown on sapphire substrate (AlN/sapphire templates), which commonly serve as pseudo-substrates for the UV LEDs. At this point, it is still a challenge to obtain AlN/sapphire templates with the TDD of lower than 10⁹ cm^-2 in the effort towards improving the UV LEDs efficiency.

This talk will present results from optimization works for the growth of AlN/sapphire templates at INOR, USM. In particular, the first part of this talk discusses on the effect of nitridation time, nitridation temperature, nucleation time on reducing the TDD in the AlN/sapphire template with the growth temperature, T_g above 1200 °C. With the optimum parameters, the TDD in the template can be as low as ~8.6 ×10⁸ cm^-2. Meanwhile, the surface is atomically smooth with improved steps-like structure. The second describes the role of trimethylaluminum (TMAl) preflow in maintaining the material quality of the AlN/sapphire templates when the templates were grown at a lower T_g , of which around 1175 °C. The last part proposes the potential of our AlN/sapphire in realizing workable UV LEDs.

Assoc. Prof. Dr. Norzaini Zainal

Assoc. Prof. Dr. Norzaini Zainal is currently an Associate Professor at Universiti Sains Malaysia. At her early career, she spent almost two years working on cubic gallium nitride (GaN) material, which was an extended project from her PhD work at University of Nottingham, UK. Later, she initiated a new research theme in nitrides semiconductors, focusing on controlling properties of nitrides thin films through base structuring in nanoscale and base crystal orientation, together with manipulation of processing physically and thermally. In recent years, her team has worked extensively in improving material properties of Al(Ga)N and GaN as base layers for ultraviolet (UV) and visible light emitting diodes (LEDs) through epitaxial technology based metal organics chemical vapor deposition (MOCVD). They also focus on designing and developing LEDs operating in UV and green spectral regions. So far, Norzaini Zainal’s team has collaborated with several leading groups in nitrides; e.g. University of California, Santa Barbara, USA, Université Côte d¢Azur, France, King Abdullah University of Science and Technology (KAUST), and the latest, Ferdinand Braun Institute, Germany. 

Abstract